inchange semiconductor isc product specification isc silicon npn power transistor BU407H description high voltage: v cev = 330v(min) fast switching speed- : t f = 750ns(max) low saturation voltage- : v ce(sat) = 1.0v(max)@ i c = 5a applications designed for use in horizontal deflection output stages of tv?s and crt?s absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 330 v v cev collector-emitter voltage 330 v v ceo collector-emitter voltage 150 v v ebo emitter-base voltage 6 v i c collector current-continuous 7 a i cp collector current-peak repetitive 10 a i cp collector current- peak (10ms) 15 a i b b base current 4 a p c collector power dissipation @ t c =25 60 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 2.08 /w r th j-a thermal resistance, junction to ambient 70 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU407H electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma ;i b = 0 150 v v ce( sat ) collector-emitter saturation voltage i c = 5a; i b = 0.8a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 5a; i b = 0.8a b 1.2 v i ces collector cutoff current v ce = 330v; v be = 0 v ce = 200v; v be = 0 5.0 0.1 ma i ebo emitter cutoff current v eb = 6v; i c =0 1.0 ma f t current-gain?bandwidth product i c = 0.5a ; v ce = 10v 10 mhz c ob output capacitance i e = 0; v cb = 10v; f test = 1.0mhz 80 pf t f fall time i c = 5a; i b end = 0.8a, v cc = 40v 0.75 s isc website www.iscsemi.cn 2
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